Superior material properties of AlN on vicinal 4H-SiC
2006 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 100, no 3Article in journal (Refereed) Published
The crystal structure and optical properties of thick (>100 nm) AlN layers grown by hot-wall metalorganic chemical vapor deposition are characterized by infrared spectroscopic ellipsometry, cathodoluminescence, and transmission electron microscopy. The choice of substrates among the available SiC wafer polytype modifications (4H/6H) and misorientations (on-/off-axis cut) is found to determine the AlN defect interaction, stress homogeneity, and luminescence. The growth of thick AlN layers benefits by performing the epitaxy on off-axis substrates because, due to stacking faults, the propagation of threading defects in AlN layers is stopped in a narrow interface region. © 2006 American Institute of Physics.
Place, publisher, year, edition, pages
2006. Vol. 100, no 3
IdentifiersURN: urn:nbn:se:liu:diva-36477DOI: 10.1063/1.2219380Local ID: 31427OAI: oai:DiVA.org:liu-36477DiVA: diva2:257325