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Modeling of band gap properties of GaInNP alloys lattice matched to GaAs
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .ORCID iD: 0000-0001-7155-7103
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .ORCID iD: 0000-0002-6405-9509
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2006 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 88, no 3, 31907- p.Article in journal (Refereed) Published
Abstract [en]

Compositional and temperature dependences of the band gap energies of GaInNP alloys, which are lattice matched to GaAs, are determined and modeled by a band anticrossing (BAC) interaction between the localized state of the isolated NP and extended host states. The BAC parameters are deduced as EN =2.1±0.1 eV and CMN =1.7±0.2 eV. The low value of the coupling parameter CMN implies weaker coupling of the N level with the host matrix, presumably due to short range ordering effects, similar to the case of GaInNAs alloys with a high In content. The obtained information is important for future modeling of the electronic structure of the alloys. © 2006 American Institute of Physics.

Place, publisher, year, edition, pages
2006. Vol. 88, no 3, 31907- p.
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Natural Sciences
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URN: urn:nbn:se:liu:diva-36495DOI: 10.1063/1.2164433Local ID: 31452OAI: oai:DiVA.org:liu-36495DiVA: diva2:257343
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2017-12-13

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Buyanova, IrinaChen, Weimin

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