Modeling of band gap properties of GaInNP alloys lattice matched to GaAs
2006 (English)In: Applied Physics Letters, ISSN 0003-6951, Vol. 88, no 3, 31907- p.Article in journal (Refereed) Published
Compositional and temperature dependences of the band gap energies of GaInNP alloys, which are lattice matched to GaAs, are determined and modeled by a band anticrossing (BAC) interaction between the localized state of the isolated NP and extended host states. The BAC parameters are deduced as EN =2.1±0.1 eV and CMN =1.7±0.2 eV. The low value of the coupling parameter CMN implies weaker coupling of the N level with the host matrix, presumably due to short range ordering effects, similar to the case of GaInNAs alloys with a high In content. The obtained information is important for future modeling of the electronic structure of the alloys. © 2006 American Institute of Physics.
Place, publisher, year, edition, pages
2006. Vol. 88, no 3, 31907- p.
IdentifiersURN: urn:nbn:se:liu:diva-36495DOI: 10.1063/1.2164433Local ID: 31452OAI: oai:DiVA.org:liu-36495DiVA: diva2:257343