Effect of nitrogen ion bombardment on defect formation and luminescence efficiency of GaNP epilayers grown by molecular-beam epitaxy
2006 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 88, no 10, 101904- p.Article in journal (Refereed) Published
Radiative efficiency of GaNP epilayers grown on GaP substrates by solid-source molecular beam epitaxy is significantly improved by reduced nitrogen ion bombardment during the growth. Based on the results of temperature-dependent photoluminescence (PL) and optically detected magnetic resonance studies (ODMR), the observed improvements are attributed to reduced formation of defects, such as a Ga interstitial related defect and an unidentified defect revealed by ODMR. We demonstrate that these defects act as competing recombination centers, which promote thermal quenching of the PL intensity and result in a substantial (34×) decrease in room-temperature PL intensity. © 2006 American Institute of Physics.
Place, publisher, year, edition, pages
2006. Vol. 88, no 10, 101904- p.
Natural Sciences Condensed Matter Physics
IdentifiersURN: urn:nbn:se:liu:diva-36496DOI: 10.1063/1.2182028Local ID: 31453OAI: oai:DiVA.org:liu-36496DiVA: diva2:257344