On a possible origin of the 2.87 eV optical transition in GaNP
2006 (English)In: Journal of Physics: Condensed Matter, ISSN 0953-8984, Vol. 18, no 2, 449-457 p.Article in journal (Refereed) Published
Temperature dependent photoluminescence excitation spectroscopy is employed to evaluate basic physical properties of the 2.87 eV absorption peak, recently discovered for the GaNxP1-x alloys. Whereas the appearance of this transition is found to be facilitated by incorporation of N and also H atoms, its intensity does not scale with the N content in the alloys. This questions the possible association of this feature with an N-related localized state. On the basis of the results of temperature dependent measurements, it is concluded that the state involved has a non-Γ character. Excitation of the known N-related localized states via this state is found to be non-selective, unlike that between the N-related centres. The observed properties are shown to be barely consistent with those predicted for the higher lying localized state of the isolated N atom derived from the Γ conduction band minimum (CBM). Alternative explanations for the '2.87 eV' state as being due to either a t 2 component of the X3c (or L1c) CBM or a level arising from a complex of N and H (in some form) are also discussed. © 2006 IOP Publishing Ltd.
Place, publisher, year, edition, pages
2006. Vol. 18, no 2, 449-457 p.
IdentifiersURN: urn:nbn:se:liu:diva-36501DOI: 10.1088/0953-8984/18/2/008Local ID: 31458OAI: oai:DiVA.org:liu-36501DiVA: diva2:257349