A cross-sectional scanning tunneling microscopy study of a quantum dot infrared photodetector structure
2006 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 100, 44320-1- p.Article in journal (Refereed) Published
We report on cross-sectional scanning tunneling microscopy studies of a quantum dot infrared photodetector structure consisting of multiple InGaAs quantum wells containing InAs quantum dots and separated by GaAs. We have investigated the composition and size distribution of the InAs quantum dots in this structure. Using cross-sectional scanning tunneling microscopy images displaying atomic resolution, we reveal that the InAs quantum dots are strongly intermixed with the InGaAs quantum well layer. We estimate the size distribution of the dots and find this to be nonuniform. Further, defects related to dopants introduced in the structure are identified and their concentration is estimated
Place, publisher, year, edition, pages
2006. Vol. 100, 44320-1- p.
IdentifiersURN: urn:nbn:se:liu:diva-36506DOI: 10.1063/1.2245195Local ID: 31467OAI: oai:DiVA.org:liu-36506DiVA: diva2:257354