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Optically detected magnetic resonance studies of point defects in Ga(Al)Nas
Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials. Linköping University, The Institute of Technology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.ORCID iD: 0000-0001-7155-7103
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2006 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 73, no 12, 125204- p.Article in journal (Refereed) Published
Abstract [en]

An optically detected magnetic resonance (ODMR) study of Ga(Al)NAs alloys grown by molecular beam epitaxy on GaAs substrates is presented. A number of grown-in defects were observed which act as nonradiative recombination centers. A detailed analysis of experimental data using a spin Hamiltonian leads to the identification of two Gai defects. A comparison with similar defects in other phosphide-based diluted nitride III-V compounds, such as GaAlNP and GaInNP, allows us to obtain additional information about the nearest surrounding of the defects. A discussion of possible models for other defects observed in the experiments is also presented. © 2006 The American Physical Society.

Place, publisher, year, edition, pages
2006. Vol. 73, no 12, 125204- p.
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Natural Sciences Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-36510DOI: 10.1103/PhysRevB.73.125204Local ID: 31471OAI: oai:DiVA.org:liu-36510DiVA: diva2:257358
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2017-12-13

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Vorona, IgorDagnelund, DanielBuyanova, IrinaChen, Weimin

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Vorona, IgorDagnelund, DanielBuyanova, IrinaChen, Weimin
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