Optically detected magnetic resonance studies of point defects in Ga(Al)Nas
2006 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 73, no 12, 125204- p.Article in journal (Refereed) Published
An optically detected magnetic resonance (ODMR) study of Ga(Al)NAs alloys grown by molecular beam epitaxy on GaAs substrates is presented. A number of grown-in defects were observed which act as nonradiative recombination centers. A detailed analysis of experimental data using a spin Hamiltonian leads to the identification of two Gai defects. A comparison with similar defects in other phosphide-based diluted nitride III-V compounds, such as GaAlNP and GaInNP, allows us to obtain additional information about the nearest surrounding of the defects. A discussion of possible models for other defects observed in the experiments is also presented. © 2006 The American Physical Society.
Place, publisher, year, edition, pages
2006. Vol. 73, no 12, 125204- p.
Natural Sciences Condensed Matter Physics
IdentifiersURN: urn:nbn:se:liu:diva-36510DOI: 10.1103/PhysRevB.73.125204Local ID: 31471OAI: oai:DiVA.org:liu-36510DiVA: diva2:257358