Optical characterization of ZnMnO-based dilute magnetic semiconductor structures
2006 (English)In: Journal of Vacuum Science & Technology B, ISSN 1071-1023, Vol. 24, no 1, 259-262 p.Article in journal (Refereed) Published
n -type ZnMnO spin injection layers were grown by pulsed laser deposition on top of n-ZnMgOZnOp-AlGaNp-GaN hybrid spin light-emitting diode (LED) structures synthesized by molecular-beam epitaxy. Both the ZnMnOZnMgOZnOAlGaNGaN structures and control ZnMnO samples show no or very low (up to 10% at the lowest temperatures) optical (spin) polarization at zero field or 5 T, respectively. This indicates difficulties in generating spin polarization by optical spin orientation or possible efficient spin losses. The results are similar to those found earlier for GaMnNInGaNAlGaN spin-LED structures and indicate that these wide-band-gap dilute magnetic semiconductors with weak spin-orbit interaction and hexagonal symmetry are not attractive for spin-LED applications. © 2006 American Vacuum Society.
Place, publisher, year, edition, pages
2006. Vol. 24, no 1, 259-262 p.
National CategoryNatural Sciences
IdentifiersURN: urn:nbn:se:liu:diva-36511DOI: 10.1116/1.2163884Local ID: 31472OAI: oai:DiVA.org:liu-36511DiVA: diva2:257359