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Coexistence of type-I and type-II band lineups in Cd(Te,Se)/ZnSe quantum-dot structures
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2006 (English)In: Applied Physics Letters, ISSN 0003-6951, Vol. 89, no 12Article in journal (Refereed) Published
Abstract [en]

The authors report on transmission electron microscopy, cathodoluminescence, and time resolved photoluminescence studies of thin Cd(Te,Se) layers in a ZnSe matrix, grown by molecular beam epitaxy. All observations confirm strain-induced self-assembly of quantum dots (QD's), induced primarily by the 14% lattice mismatch between CdTe and ZnSe. The emission spectrum of the structure is the superposition of a relatively narrow luminescence line originating from CdSe-enriched type-I QD's and a broad band attributed to the emission of an ultrathin ZnTeSe/ZnSe layer with type-II band lineup, formed in between the QD's. © 2006 American Institute of Physics.

Place, publisher, year, edition, pages
2006. Vol. 89, no 12
National Category
Natural Sciences
URN: urn:nbn:se:liu:diva-36527DOI: 10.1063/1.2355439Local ID: 31514OAI: diva2:257375
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2011-01-11

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Bergman, PederMonemar, Bo
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