Band gap properties of Zn1−xCdxO alloys grown by molecular-beam epitaxy
2006 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 89, 151909- p.Article in journal (Refereed) Published
Optical absorption and reflectance measurements are performed to evaluate compositional and temperature dependences of band gap energies of Zn1−xCdxO alloys grown by molecular-beam epitaxy. The compositional dependence of the band gap energy, determined by taking into account excitonic contributions, is shown to follow the trend Eg(x) = 3.37−2.82x+0.95x2. Incorporation of Cd was also shown to somewhat slow down thermal variation of the band gap energies, beneficial for future device applications.
Place, publisher, year, edition, pages
2006. Vol. 89, 151909- p.
Natural Sciences Condensed Matter Physics
IdentifiersURN: urn:nbn:se:liu:diva-36528DOI: 10.1063/1.2361081Local ID: 31516OAI: oai:DiVA.org:liu-36528DiVA: diva2:257376