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Divacancy model for P6/P7 centers in 4H- and 6H-SiC
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
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2006 (English)In: Materials Science Forum, Vols. 527-529, 2006, Vol. 527-529, 527-530 p.Conference paper (Refereed)
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2006. Vol. 527-529, 527-530 p.
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Natural Sciences
URN: urn:nbn:se:liu:diva-36553Local ID: 31614OAI: diva2:257402
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2010-12-13

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Nguyen, Son TienMagnusson, BjörnJanzén, Erik
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The Institute of TechnologySemiconductor Materials
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