liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Optical signatures of dopants in GaN
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
Show others and affiliations
2006 (English)In: Materials Science in Semiconductor Processing, ISSN 1369-8001, E-ISSN 1873-4081, Vol. 9, no 1-3, 168-174 p.Article in journal (Refereed) Published
Abstract [en]

The characteristic optical spectra for shallow donors and acceptors in GaN are discussed. The most accurate photoluminescence (PL) data are obtained from samples grown on freestanding GaN substrates, where strain shifts are absent and a low spectroscopic line width is obtained. Recent PL data for excitons bound to the O and Si donors are discussed in some detail, giving accurate values for the binding energies and excited bound donor states. The Mg-acceptor is the most important one for p-doping, but the related optical spectra are controversial. We show that there are two acceptors present in Mg-doped GaN, with two different acceptor bound exciton peaks, and also two corresponding lower energy donor-acceptor pair spectra. We give tentative evidence for their interpretation. © 2006 Elsevier Ltd. All rights reserved.

Place, publisher, year, edition, pages
2006. Vol. 9, no 1-3, 168-174 p.
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-36639DOI: 10.1016/j.mssp.2006.01.075Local ID: 32016OAI: oai:DiVA.org:liu-36639DiVA: diva2:257488
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2017-12-13

Open Access in DiVA

No full text

Other links

Publisher's full text

Authority records BETA

Monemar, BoPaskov, PlamenBergman, Peder

Search in DiVA

By author/editor
Monemar, BoPaskov, PlamenBergman, Peder
By organisation
The Institute of TechnologyMaterials Science
In the same journal
Materials Science in Semiconductor Processing
Natural Sciences

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 56 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf