Anisotropy of the Γ-point effective mass and mobility in hexagonal InN
2006 (English)In: Physica Status Solidi. C, Current topics in solid state physics, ISSN 1610-1634, E-ISSN 1610-1642, Vol. 3, no 6, 1854-1857 p.Article in journal (Refereed) Published
We determine the anisotropic electron effective mass and mobility parameters in wurtzite InN thin films with free electron concentration Nfrom 1.8 × 1017 cm–3 to 9.5 × 1018 cm–3 using Infrared Magneto-optic Generalized Ellipsometry. The room-temperature measurements were carried out with magnetic fields up to 4.5 T. For the Γ-point we estimate m*⊥ = 0.047m0 and m*‖ = 0.039m0 for polarization perpendicular and parallel to the c -axis, respectively. Scattering by impurities or ionized donors may explain the decrease of mobility for polarization parallel to the c -axis from 1600 cm2/(Vs) to 800 cm2/(Vs) with increase in N , where the perpendicular mobility is further decreased, likely caused by additional grain boundary scattering.
Place, publisher, year, edition, pages
Weinheim, Germany: Wiley-VCH Verlagsgesellschaft, 2006. Vol. 3, no 6, 1854-1857 p.
IdentifiersURN: urn:nbn:se:liu:diva-36641DOI: 10.1002/pssc.200565467ISI: 000239543600112Local ID: 32018OAI: oai:DiVA.org:liu-36641DiVA: diva2:257490
6th International Conference on Nitride Semiconductors; Bremen, Germany; Aug 28 -Sept 2, 2005