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Anisotropy of the Γ-point effective mass and mobility in hexagonal InN
Institut fur Experimentelle Physik II, Universität Leipzig, Leipzig, Germany.
Institut fur Experimentelle Physik II, Universität Leipzig, Leipzig, Germany.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Department of Electrical and Computer Engineering, Cornell University, USA.
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2006 (English)In: Physica Status Solidi. C, Current topics in solid state physics, ISSN 1610-1634, E-ISSN 1610-1642, Vol. 3, no 6, 1854-1857 p.Article in journal (Refereed) Published
Abstract [en]

We determine the anisotropic electron effective mass and mobility parameters in wurtzite InN thin films with free electron concentration Nfrom 1.8 × 1017 cm–3 to 9.5 × 1018 cm–3 using Infrared Magneto-optic Generalized Ellipsometry. The room-temperature measurements were carried out with magnetic fields up to 4.5 T. For the Γ-point we estimate m* = 0.047m0 and m* = 0.039m0 for polarization perpendicular and parallel to the c -axis, respectively. Scattering by impurities or ionized donors may explain the decrease of mobility for polarization parallel to the c -axis from 1600 cm2/(Vs) to 800 cm2/(Vs) with increase in N , where the perpendicular mobility is further decreased, likely caused by additional grain boundary scattering.

Place, publisher, year, edition, pages
Weinheim, Germany: Wiley-VCH Verlagsgesellschaft, 2006. Vol. 3, no 6, 1854-1857 p.
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Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-36641DOI: 10.1002/pssc.200565467ISI: 000239543600112Local ID: 32018OAI: oai:DiVA.org:liu-36641DiVA: diva2:257490
Conference
6th International Conference on Nitride Semiconductors; Bremen, Germany; Aug 28 -Sept 2, 2005
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2017-12-13Bibliographically approved

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Darakchieva, Vanya

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