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Dominant shallow acceptor related to oxygen and hydrogen in GaN
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
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2006 (English)In: Physical review. B, Condensed matter and materials physics, Vol. 376-377, 440-443 p.Article in journal (Refereed) Published
Abstract [en]

We present new photoluminescence (PL) data of deliberately O-doped and Mg-doped GaN layers grown by MOCVD. The combination of these data with positron annihilation spectroscopy (PAS) and SIMS results obtained on the same samples shows a clear correlation of the PL intensity of the acceptor related emissions at 3.466 and 3.27 eV (at 2 K) with O doping. The acceptor is stable upon annealing in N-2 in our highly resistive samples, while it is known be unstable in p-GaN. Our tentative conclusion is that this very commonly occurring acceptor is either a V-Ga-O-H complex or a second configuration of the Mg acceptor containing H.

Place, publisher, year, edition, pages
2006. Vol. 376-377, 440-443 p.
Keyword [en]
GaN, hydrogen, oxygen, acceptor
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-36643DOI: 10.1016/j.physb.2005.12.113Local ID: 32021OAI: oai:DiVA.org:liu-36643DiVA: diva2:257492
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2009-10-14

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Monemar, BoPaskov, Plamen

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