Growth of bulk GaN in a vertical hydride vapour phase epitaxy reactor
2006 (English)In: Superlattices and Microstructures, ISSN 0749-6036, Vol. 40, no 4-6 SPEC. ISS., 205-213 p.Article in journal (Refereed) Published
Using the hydride vapour phase epitaxy technique, we have grown 2-inch diameter bulk GaN material with a thickness up to 2 mm. The growth was performed in a vertical hot-walled reactor at atmospheric pressure. In this geometry, the process gases are distributed from the bottom upwards through the reactor. We present recent results on growth and characterization of the bulk GaN material. The structural and optical properties of the layers have been studied using decorative etching, optical microscopy, scanning electron microscopy, X-ray diffraction, cathodoluminescence, and low temperature photoluminescence. © 2006 Elsevier Ltd. All rights reserved.
Place, publisher, year, edition, pages
2006. Vol. 40, no 4-6 SPEC. ISS., 205-213 p.
IdentifiersURN: urn:nbn:se:liu:diva-36782DOI: 10.1016/j.spmi.2006.09.014Local ID: 32545OAI: oai:DiVA.org:liu-36782DiVA: diva2:257631