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Growth of bulk GaN in a vertical hydride vapour phase epitaxy reactor
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .ORCID iD: 0000-0002-2597-3322
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .ORCID iD: 0000-0002-9840-7364
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2006 (English)In: Superlattices and Microstructures, ISSN 0749-6036, E-ISSN 1096-3677, Vol. 40, no 4-6 SPEC. ISS., 205-213 p.Article in journal (Refereed) Published
Abstract [en]

Using the hydride vapour phase epitaxy technique, we have grown 2-inch diameter bulk GaN material with a thickness up to 2 mm. The growth was performed in a vertical hot-walled reactor at atmospheric pressure. In this geometry, the process gases are distributed from the bottom upwards through the reactor. We present recent results on growth and characterization of the bulk GaN material. The structural and optical properties of the layers have been studied using decorative etching, optical microscopy, scanning electron microscopy, X-ray diffraction, cathodoluminescence, and low temperature photoluminescence. © 2006 Elsevier Ltd. All rights reserved.

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2006. Vol. 40, no 4-6 SPEC. ISS., 205-213 p.
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Natural Sciences
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URN: urn:nbn:se:liu:diva-36782DOI: 10.1016/j.spmi.2006.09.014Local ID: 32545OAI: oai:DiVA.org:liu-36782DiVA: diva2:257631
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2017-12-13

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Hemmingsson, CarlPaskov, PlamenPozina, GaliaMonemar, Bo

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