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Anisotropic strain and phonon deformation potentials in GaN
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Applied Optics .ORCID iD: 0000-0001-9229-2028
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2007 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 75, no 19, 195217- p.Article in journal (Refereed) Published
Abstract [en]

We report optical phonon frequency studies in anisotropically strained c -plane- and a -plane-oriented GaN films by generalized infrared spectroscopic ellipsometry and Raman scattering spectroscopy. The anisotropic strain in the films is obtained from high-resolution x-ray diffraction measurements. Experimental evidence for splitting of the GaN E1 (TO), E1 (LO), and E2 phonons under anisotropic strain in the basal plane is presented, and their phonon deformation potentials c E1 (TO), c E1 (LO), and c E2 are determined. A distinct correlation between anisotropic strain and the A1 (TO) and E1 (LO) frequencies of a -plane GaN films reveals the a A1 (TO), b A1 (TO), a E1 (LO), and b E1 (LO) phonon deformation potentials. The a A1 (TO) and b A1 (TO) are found to be in very good agreement with previous results from Raman experiments. Our a A1 (TO) and a E1 (LO) phonon deformation potentials agree well with recently reported theoretical estimations, while b A1 (TO) and b E1 (LO) are found to be significantly larger than the theoretical values. A discussion of the observed differences is presented. © 2007 The American Physical Society.

Place, publisher, year, edition, pages
2007. Vol. 75, no 19, 195217- p.
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Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-38673DOI: 10.1103/PhysRevB.75.195217Local ID: 45290OAI: oai:DiVA.org:liu-38673DiVA: diva2:259522
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2017-12-13

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Darakchieva, VanyaPaskova, TanjaArwin, HansPaskov, PlamenMonemar, Bo

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Darakchieva, VanyaPaskova, TanjaArwin, HansPaskov, PlamenMonemar, Bo
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Semiconductor MaterialsThe Institute of TechnologyDepartment of Physics, Chemistry and BiologyApplied Optics
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Physical Review B. Condensed Matter and Materials Physics
Natural Sciences

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