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On the lattice parameters of GaN
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
2007 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 91, no 3, 031911- p.Article in journal (Refereed) Published
Abstract [en]

The lattice parameters of low-defect density, undoped bulk GaN fabricated by hydride vapor phase epitaxy (HVPE) on (0001) sapphire and subsequent substrate removal, are precisely determined using high-resolution x-ray diffraction. The obtained values, c=5.18523 Å and a=3.18926 Å, are compared with the lattice parameters of freestanding HVPE GaN from different sources and found to be representative for state-of-the-art undoped HVPE bulk GaN material. A comparison with bulk GaN fabricated by the high-pressure technique and homoepitaxial GaN is made, and significant differences in the lattice parameters are found. The observed differences are discussed and a possible explanation is suggested. © 2007 American Institute of Physics.

Place, publisher, year, edition, pages
2007. Vol. 91, no 3, 031911- p.
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-38674DOI: 10.1063/1.2753122Local ID: 45291OAI: oai:DiVA.org:liu-38674DiVA: diva2:259523
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2017-12-13

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Darakchieva, VanyaMonemar, Bo

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