Influence of Cooling Rate after High Temperature Annealing on Deep Levels in High-Purity Semi-Insulating 4H-SiC
2007 (English)In: Materials Science Forum, vol. 556-557, Trans Tech Publications , 2007, 371- p.Conference paper (Refereed)
The influence of different cooling rates on deep levels in 4H-SiC after high temperature annealing has been investigated. The samples were heated from room temperature to 2300°C, followed by a 20 minutes anneal at this temperature. Different subsequent cooling sequences down to 1100°C were used. The samples have been investigated using photoluminescence (PL) and IV characteristics. The PL intensities of the silicon vacancy (VSi) and UD-2, were found to increase with a faster cooling rate.
Place, publisher, year, edition, pages
Trans Tech Publications , 2007. 371- p.
IdentifiersURN: urn:nbn:se:liu:diva-38676DOI: 10.4028/www.scientific.net/MSF.556-557.371Local ID: 45293OAI: oai:DiVA.org:liu-38676DiVA: diva2:259525