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Internal structure of the neutral donor-bound exciton complex in cubic zinc-blende and wurtzite semiconductors
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
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2007 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 75, no 8Article in journal (Refereed) Published
Abstract [en]

We calculate the fine structure splitting of the near band edge donor-bound excitons in major cubic semiconductors using an approach inspired by an earlier one that consists in replacing the Morse potential by a Kratzer one, in order to account for the repulsion between the donor and the hole. A regular trend is observed when plotting the computed results in terms of donor binding energies for all these semiconductors. Second, we extend the method to wurtzite semiconductors, namely CdS, GaN, and ZnO. The previously reported trend is found again, but enriched with the strong anisotropy of the dispersion relations in the valence band of these semiconductors. We end up in addressing a quantitative interpretation of the fine structure splitting of the donor bound exciton complex which includes the jj coupling between the valence band Bloch and the envelope nonrigid rotator hole states. © 2007 The American Physical Society.

Place, publisher, year, edition, pages
2007. Vol. 75, no 8
National Category
Natural Sciences
URN: urn:nbn:se:liu:diva-38677DOI: 10.1103/PhysRevB.75.085204Local ID: 45294OAI: diva2:259526
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2013-05-07

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Paskov, PlamenMonemar, Bo
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Semiconductor MaterialsThe Institute of Technology
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