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Thick epilayers for power devices
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.ORCID iD: 0000-0001-5768-0244
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.ORCID iD: 0000-0002-7171-5383
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
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2007 (English)In: Materials Science Forum, vol. 556-557, Trans Tech Publications , 2007, 47- p.Conference paper, Published paper (Refereed)
Abstract [en]

Growth of thick epitaxial SiC layers needed for high power devices is presented for horizontal hot-wall CVD (HWCVD) reactors. We demonstrate thickness of epilayer of 100 μm and more with good morphology, low-doping with no doping variation through the whole thick layer and reasonable carrier lifetime which mainly depends on the substrate quality. Typical epidefects are described and their density can dramatically be reduced when choosing correctly the growth conditions as well as the polishing of the surface prior to the growth. The control of the doping and thickness uniformities as well as the run-to-run reproducibility is also presented. Various characterization techniques such as optical microscopy, AFM, reflectance, CV, PL and minority carrier lifetime have been used. Results of high-voltage SiC Schottky power devices are presented.

Place, publisher, year, edition, pages
Trans Tech Publications , 2007. 47- p.
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-38679DOI: 10.4028/www.scientific.net/MSF.556-557.47Local ID: 45296OAI: oai:DiVA.org:liu-38679DiVA: diva2:259528
Conference
ECSCRM2006
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2015-03-11

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Henry, Anneul-Hassan, JawadPedersen, HenrikBeyer, FranziskaBergman, PederAndersson, SvenJanzén, Erik

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Henry, Anneul-Hassan, JawadPedersen, HenrikBeyer, FranziskaBergman, PederAndersson, SvenJanzén, Erik
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