liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Theory of the Stark Effect on the Donor Levels in 4H Silicon Carbide
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
2007 (English)In: Materials Science Forum, vol. 556-557, Trans Tech Publications , 2007, 435- p.Conference paper, Published paper (Refereed)
Place, publisher, year, edition, pages
Trans Tech Publications , 2007. 435- p.
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-38681Local ID: 45298OAI: oai:DiVA.org:liu-38681DiVA: diva2:259530
Conference
ECSCRM 2006
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2013-05-07

Open Access in DiVA

No full text

Authority records BETA

Ivanov, Ivan GueorguievJanzén, Erik

Search in DiVA

By author/editor
Ivanov, Ivan GueorguievJanzén, Erik
By organisation
Semiconductor MaterialsThe Institute of Technology
Natural Sciences

Search outside of DiVA

GoogleGoogle Scholar

urn-nbn

Altmetric score

urn-nbn
Total: 53 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf