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A study of thick 3C-SiC epitaxial layers grown on 6H-SiC substrates by sublimation epitaxy in vacuum
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
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2007 (English)In: Semiconductors (Woodbury, N.Y.), ISSN 1063-7826, E-ISSN 1090-6479, Vol. 41, no 3, 263-265 p.Article in journal (Refereed) Published
Abstract [en]

3C-SiC epitaxial layers with a thickness of up to 100 μm were grown on 6H-SiC hexagonal substrates by sublimation epitaxy in vacuum. The n-type epitaxial layers with the area in the range 0.3-0.5 cm2 and uncompensated donor concentration N d - N a ∼ (10 17-1018) cm-3 were produced at maximum growth rates of up to 200 μm/h. An X-ray analysis demonstrated that the epitaxial layers are composed of the 3C-SiC polytype, without inclusions of other polytypes. The photoluminescence (PL) spectrum of the layers was found to be dominated by the donor-acceptor (Al-N) recombination band peaked at hv ≈ 2.12 eV. The PL spectrum measured at 6 K was analyzed in detail. It is concluded that the epitaxial layers obtained can serve as substrates for 3C-SiC-based electronic devices. © Nauka/Interperiodica 2007.

Place, publisher, year, edition, pages
2007. Vol. 41, no 3, 263-265 p.
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Natural Sciences
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URN: urn:nbn:se:liu:diva-38684DOI: 10.1134/S1063782607030037Local ID: 45301OAI: oai:DiVA.org:liu-38684DiVA: diva2:259533
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2017-12-13

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Lebedev, AlexanderSyväjärvi, MikaelYakimova, Rositsa

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Lebedev, AlexanderSyväjärvi, MikaelYakimova, Rositsa
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The Institute of TechnologyDepartment of Physics, Chemistry and BiologyMaterials Science
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Semiconductors (Woodbury, N.Y.)
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CiteExportLink to record
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