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Strain-free low-defect-density bulk GaN with nonpolar orientation
University of Bremen, Institute of Solid State Physics, Bremen, Germany.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
University of Bremen, Bremen, Germany.
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2006 (English)In: MRS Proceedings 2006 MRS Fall Meeting: Symposium I – Advances in III-V Nitride Semiconductor Materials and Devices / [ed] C.R. Abernathy, H. Jiang, J.M. Zavada, New York, NY, United States: Materials Research Society, 2006, I3.4- p.Conference paper, Published paper (Refereed)
Abstract [en]

Bulk GaN sliced in bars along (11-20) and (1-100) planes from a boule grown in the [0001] direction by HVPE was confirmed as strain free material with a low dislocation density by using several characterization techniques. The high-structural quality of the material allows photoluminescence studies of free excitons, principal donor bound excitons and their two-electron satellites with regard to the optical selection rules. Raman scattering study of the bulk GaN with nonpolar orientations allows a direct access to the active phonon modes and a direct determination of their strain-free positions.

Place, publisher, year, edition, pages
New York, NY, United States: Materials Research Society, 2006. I3.4- p.
Series
MRS Online Proceedings, ISSN 1946-4274 ; 955
Keyword [en]
crystal growth; x-ray diffraction (XRD); optical properties
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-38690DOI: 10.1557/PROC-0955-I03-04Local ID: 45326OAI: oai:DiVA.org:liu-38690DiVA: diva2:259539
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2014-09-03

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Paskova, TanjaPaskov, PlamenDarakchieva, VanyaMonemar, Bo

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