Strain-free low-defect-density bulk GaN with nonpolar orientation
2006 (English)In: MRS Proceedings 2006 MRS Fall Meeting: Symposium I – Advances in III-V Nitride Semiconductor Materials and Devices / [ed] C.R. Abernathy, H. Jiang, J.M. Zavada, New York, NY, United States: Materials Research Society, 2006, I3.4- p.Conference paper (Refereed)
Bulk GaN sliced in bars along (11-20) and (1-100) planes from a boule grown in the  direction by HVPE was confirmed as strain free material with a low dislocation density by using several characterization techniques. The high-structural quality of the material allows photoluminescence studies of free excitons, principal donor bound excitons and their two-electron satellites with regard to the optical selection rules. Raman scattering study of the bulk GaN with nonpolar orientations allows a direct access to the active phonon modes and a direct determination of their strain-free positions.
Place, publisher, year, edition, pages
New York, NY, United States: Materials Research Society, 2006. I3.4- p.
, MRS Online Proceedings, ISSN 1946-4274 ; 955
crystal growth; x-ray diffraction (XRD); optical properties
IdentifiersURN: urn:nbn:se:liu:diva-38690DOI: 10.1557/PROC-0955-I03-04Local ID: 45326OAI: oai:DiVA.org:liu-38690DiVA: diva2:259539