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Very high epitaxial growth rate of SiC using MTS as chloride-based precursor
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.ORCID iD: 0000-0002-7171-5383
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.ORCID iD: 0000-0001-5768-0244
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
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2007 (English)In: Surface and Coatings Technology, Volume 201, Issue 22-23 SPEC. ISS., Elsevier , 2007, 8931- p.Conference paper, Published paper (Refereed)
Abstract [en]

  

Place, publisher, year, edition, pages
Elsevier , 2007. 8931- p.
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Natural Sciences
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URN: urn:nbn:se:liu:diva-38754Local ID: 45525OAI: oai:DiVA.org:liu-38754DiVA: diva2:259603
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2015-03-11

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Pedersen, HenrikLeone, StefanoHenry, AnneDarakchieva, VanyaJanzén, Erik

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