Dynamics of bound excitons versus thickness in freestanding GaN wafers grown by halide vapor phase epitaxy
2007 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 90, no 22Article in journal (Refereed) Published
The bound exciton recombination properties in freestanding GaN layers of various thicknesses grown by halide vapor phase epitaxy have been characterized by time-resolved spectroscopy. Improvement of the donor bound exciton (D0 X) lifetime was observed with increasing GaN layer thickness up to ∼400 μm, while for thicker layers the recombination time of D0 X shows a tendency to saturate. The thickness-dependent behavior of the D0 X decay can be understood in terms of competition between two nonradiative mechanisms: one of which is connected to structural defects, and consequently more important for thinner layers, while for layers with thickness above 400 μm with low structural defect density the recombination time is limited by point defects such as impurities and vacancies. © 2007 American Institute of Physics.
Place, publisher, year, edition, pages
2007. Vol. 90, no 22
IdentifiersURN: urn:nbn:se:liu:diva-38755DOI: 10.1063/1.2743950Local ID: 45526OAI: oai:DiVA.org:liu-38755DiVA: diva2:259604