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Exciton localization behaviour in different well width undoped GaN/Al 0.07Ga0.93N nanostructures
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
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2007 (English)Article in journal (Refereed) Published
Abstract [en]

We report results from optical spectroscopy such as photoluminescence (PL) and time resolved photo-luminescence (TRPL) techniques from different well width MOCVD grown GaN/Al0.07Ga0.93N MQW samples. There is evidence of localization at low temperature in all samples. The decay time of all samples becomes non-exponential when the detection energy is increased with respect to the peak of the emission. Localization of carriers (excitons) is demonstrated by the "S-shape" dependences of the PL peak energies on the temperature. The time-resolved PL spectra of the 3-nm well multi quantum wells reveal that the spectral peak position shifts toward lower energies as the decay time increases and becomes red-shifted at longer decay times. There is a gradient in the PL decay time across the emission peak profile, so that the PL process at low temperatures is a free electron-localized hole transition. © Association of Polish Electrical Engineers 2007.

Place, publisher, year, edition, pages
2007. Vol. 15, no 3, 163-167 p.
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-38756DOI: 10.2478/s11772-007-0017-5Local ID: 45527OAI: oai:DiVA.org:liu-38756DiVA: diva2:259605
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2011-01-11

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Harati Zadeh, HamidMonemar, BoPaskov, PlamenHoltz, Per-Olof

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