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A surface study of wet etched AlGaN epilayers grown by hot-wall MOCVD
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
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2007 (English)In: Journal of Crystal Growth, Vol. 300, 2007, Vol. 300, no 1, 242-245 p.Conference paper, Published paper (Refereed)
Abstract [en]

Epitaxial layers of AlGaN were grown by hot-wall MOCVD and their surfaces wet chemically etched with phosphorous acid. The as-grown surfaces and the development of the etched surfaces after 10 and 20 min of etching were studied with atomic force microscopy (AFM) and CL. In the as-grown layers growth features may be resolved while the RMS is as low as 1.4 Å in a scan area of 2×2 μm. Surfaces etched for 10 min had developed etch pits and a low RMS roughness of 7 Å indicating a uniform quality of the layers. Micrometer scale hexagonal features were observed after 20 min of etching. In some cases a deep hexagonal etch pit is observed in the centre of the hexagonal feature with a 30° rotation to each other, suggesting that the origin is substrate-induced defects. © 2006 Elsevier B.V. All rights reserved.

Place, publisher, year, edition, pages
2007. Vol. 300, no 1, 242-245 p.
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Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-38760DOI: 10.1016/j.jcrysgro.2006.11.020Local ID: 45532OAI: oai:DiVA.org:liu-38760DiVA: diva2:259609
Conference
ISGN-1 2006
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2010-12-15

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Syväjärvi, MikaelKakanakova-Georgieva, AneliaYazdi, GholamrezaForsberg, UrbanJanzén, Erik

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Syväjärvi, MikaelKakanakova-Georgieva, AneliaYazdi, GholamrezaForsberg, UrbanJanzén, Erik
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