A surface study of wet etched AlGaN epilayers grown by hot-wall MOCVD
2007 (English)In: Journal of Crystal Growth, Vol. 300, 2007, Vol. 300, no 1, 242-245 p.Conference paper (Refereed)
Epitaxial layers of AlGaN were grown by hot-wall MOCVD and their surfaces wet chemically etched with phosphorous acid. The as-grown surfaces and the development of the etched surfaces after 10 and 20 min of etching were studied with atomic force microscopy (AFM) and CL. In the as-grown layers growth features may be resolved while the RMS is as low as 1.4 Å in a scan area of 2×2 μm. Surfaces etched for 10 min had developed etch pits and a low RMS roughness of 7 Å indicating a uniform quality of the layers. Micrometer scale hexagonal features were observed after 20 min of etching. In some cases a deep hexagonal etch pit is observed in the centre of the hexagonal feature with a 30° rotation to each other, suggesting that the origin is substrate-induced defects. © 2006 Elsevier B.V. All rights reserved.
Place, publisher, year, edition, pages
2007. Vol. 300, no 1, 242-245 p.
IdentifiersURN: urn:nbn:se:liu:diva-38760DOI: 10.1016/j.jcrysgro.2006.11.020Local ID: 45532OAI: oai:DiVA.org:liu-38760DiVA: diva2:259609