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Ab initio supercell calculations on aluminum-related defects in SiC
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
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2007 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 75, no 4Article in journal (Refereed) Published
Abstract [en]

Ab initio supercell calculations of the binding energies predict complex formation between aluminum and carbon interstitials in SiC. In high-energy implanted SiC aluminum acceptor can form very stable complexes with two carbon interstitials. We also show that carbon vacancy can be attached to shallow aluminum acceptor. All of these defects produce deep levels in the band gap. The possible relation of these defects to the recently found aluminum-related deep-level transient spectroscopy centers is discussed. © 2007 The American Physical Society.

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2007. Vol. 75, no 4
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Natural Sciences
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URN: urn:nbn:se:liu:diva-38809DOI: 10.1103/PhysRevB.75.045211Local ID: 45726OAI: oai:DiVA.org:liu-38809DiVA: diva2:259658
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2017-12-13

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Nguyen, Son TienJanzén, Erik

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