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Magnetic resonance studies of defects in electron-irradiated ZnO substrates
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Department of Physics, Center for Materials Science and Technology, University of Oslo, Oslo, Norway.
Department of Physics, Center for Materials Science and Technology, University of Oslo, Oslo, Norway.
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2007 (English)In: Physica. B, Condensed matter, ISSN 0921-4526, E-ISSN 1873-2135, Vol. 401-402, 507-510 p.Article in journal (Refereed) Published
Abstract [en]

Optical detection of magnetic resonance (ODMR) was used to study defects in electron-irradiated ZnO substrates. In addition to the shallow donor and the Zn vacancy, several ODMR centers with an effective electron spin were detected. Among these, the axial LU3 and non-axial LU4 centers are shown to be dominating recombination centers. The annealing behavior of radiation-induced defects was studied and possible defect models are discussed.

Place, publisher, year, edition, pages
2007. Vol. 401-402, 507-510 p.
Keyword [en]
ZnO; Intrinsic defect; Electron irradiation; Optical detection of magnetic resonance
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-38813DOI: 10.1016/j.physb.2007.09.010ISI: 000252041000121Local ID: 45730OAI: oai:DiVA.org:liu-38813DiVA: diva2:259662
Conference
24th International Conference on Defects in Semiconductors, Albuquerque, NM, USA, 22-27 July 2007
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2017-12-13Bibliographically approved

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Nguyen, Son TienIvanov, Ivan GueorguievZhao, Qing XiangWillander, MagnusJanzén, ErikYakimova, Rositsa

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Nguyen, Son TienIvanov, Ivan GueorguievZhao, Qing XiangWillander, MagnusJanzén, ErikYakimova, Rositsa
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Semiconductor MaterialsThe Institute of TechnologyPhysics and Electronics
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Physica. B, Condensed matter
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