Magnetic resonance studies of defects in electron-irradiated ZnO substrates
2007 (English)In: Physica. B, Condensed matter, ISSN 0921-4526, Vol. 401-402, 507-510 p.Article in journal (Refereed) Published
Optical detection of magnetic resonance (ODMR) was used to study defects in electron-irradiated ZnO substrates. In addition to the shallow donor and the Zn vacancy, several ODMR centers with an effective electron spin were detected. Among these, the axial LU3 and non-axial LU4 centers are shown to be dominating recombination centers. The annealing behavior of radiation-induced defects was studied and possible defect models are discussed.
Place, publisher, year, edition, pages
2007. Vol. 401-402, 507-510 p.
ZnO; Intrinsic defect; Electron irradiation; Optical detection of magnetic resonance
IdentifiersURN: urn:nbn:se:liu:diva-38813DOI: 10.1016/j.physb.2007.09.010ISI: 000252041000121Local ID: 45730OAI: oai:DiVA.org:liu-38813DiVA: diva2:259662
24th International Conference on Defects in Semiconductors, Albuquerque, NM, USA, 22-27 July 2007