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Hydrogen passivation of nitrogen in GaNAs and GaNP alloys: How many H atoms are required for each N atom?
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.ORCID iD: 0000-0001-7155-7103
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.ORCID iD: 0000-0002-6405-9509
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
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2007 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 90, no 2, 021920- p.Article in journal (Refereed) Published
Abstract [en]

Secondary ion mass spectrometry and photoluminescence are employed to evaluate the origin and efficiency of hydrogen passivation of nitrogen in GaNAs and GaNP. The hydrogen profiles are found to closely follow the N distributions, providing unambiguous evidence for their preferential binding as the dominant mechanism for neutralization of N-induced modifications in the electronic structure of the materials. Though the exact number of H atoms involved in passivation may depend on the conditions of the H treatment and the host matrixes, it is generally found that more than three H atoms are required to bind to a N atom to achieve full passivation for both alloys. © 2007 American Institute of Physics.

Place, publisher, year, edition, pages
2007. Vol. 90, no 2, 021920- p.
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Natural Sciences Condensed Matter Physics
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URN: urn:nbn:se:liu:diva-38832DOI: 10.1063/1.2425006Local ID: 45825OAI: oai:DiVA.org:liu-38832DiVA: diva2:259681
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2017-12-13

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Buyanova, IrinaChen, WeiminIzadifard, Morteza

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