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Uniform hot-wall MOCVD epitaxial growth of 2 inch AlGaN/GaN HEMT structures
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
2007 (English)In: Journal of Crystal Growth, Vol. 300, 2007, Vol. 300, no 1, 100-103 p.Conference paper, Published paper (Refereed)
Abstract [en]

The hot-wall metalorganic chemical vapor deposition (MOCVD) concept has been applied to the growth of AlxGa1-xN/GaN high electron mobility transistor (HEMT) device heterostructures on 2 inch 4H-SiC wafers. Due to the small vertical and horizontal temperature gradients inherent to the hot-wall MOCVD concept the variations of all properties of a typical HEMT heterostructure are very small over the wafer: GaN buffer layer thickness of 1.83 μm±1%, Al content of the AlxGa1-xN barrier of 27.7±0.1%, AlxGa1-xN barrier thickness of 25 nm±4%, sheet carrier density of 1.05×1013 cm-2±4%, pinch-off voltage of -5.3 V±3%, and sheet resistance of 449 Ω±1%.

Place, publisher, year, edition, pages
2007. Vol. 300, no 1, 100-103 p.
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-38862DOI: 10.1016/j.jcrysgro.2006.10.242Local ID: 45910OAI: oai:DiVA.org:liu-38862DiVA: diva2:259711
Conference
ISGN-1 2006
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2010-12-13

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Kakanakova-Georgieva, AneliaForsberg, UrbanIvanov, Ivan GueorguievJanzén, Erik

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