liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Transition Metal Doped ZnO for Spintronics
Materials Science and Engineering, University of Florida, Gainesville, FL, USA.
Materials Science and Engineering, University of Florida, Gainesville, FL, USA.
Materials Science and Engineering, University of Florida, Gainesville, FL, USA.
Physics, University of Florida, Gainesville, FL, USA.
Show others and affiliations
2007 (English)In: MRS Proceedings 2007 vol. 999, Warrendale, PA: Materials Research Society , 2007, 0999-K03-K04 p.Conference paper, Published paper (Other academic)
Abstract [en]

ZnO is a very promising material for spintronics applications, with many groups reporting room temperature ferromagnetism in films doped with transition metals during growth or by ion implantation. In films doped with Mn during PLD, we find an inverse correlation between magnetization and electron density as controlled by Sn doping. The saturation magnetization and coercivity of the implanted single-phase films were both strong functions of the initial anneal temperature, suggesting that carrier concentration alone cannot account for the magnetic properties of ZnO:Mn and factors such as crystalline quality and residual defects play a role. Plausible mechanisms for the ferromagnetism include the bound magnetic polaron model or exchange is mediated by carriers in a spin-spilt impurity band derived from extended donor orbitals. Spin-dependent phenomena in ZnO may lead to devices with new or enhanced functionality, such as polarized solid-state light sources and sensitive biological and chemical sensors.

Place, publisher, year, edition, pages
Warrendale, PA: Materials Research Society , 2007. 0999-K03-K04 p.
Series
Materials Research Society Symposium Proceedings, ISSN 0272-9172 ; 999
Keyword [en]
spintronic; chemical vapor deposition (CVD) (deposition); II-VI
National Category
Natural Sciences Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-39088DOI: 10.1557/PROC-0999-K03-04Local ID: 46556OAI: oai:DiVA.org:liu-39088DiVA: diva2:259937
Conference
2007 MRS Spring Meeting,2007
Note
Invited talkAvailable from: 2009-10-10 Created: 2009-10-10 Last updated: 2017-03-27

Open Access in DiVA

No full text

Other links

Publisher's full text

Authority records BETA

Chen, WeiminBuyanova, Irina

Search in DiVA

By author/editor
Chen, WeiminBuyanova, Irina
By organisation
The Institute of TechnologySemiconductor Materials
Natural SciencesCondensed Matter Physics

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 96 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf