Role of nitrogen in photoluminescence up-conversion in GaInNP/GaAs heterostructures
2007 (English)In: AIP Conference Proceedings / Volume 893 / [ed] Wolfgang Jantsch, Friedrich Schaffler, American Institute of Physics (AIP), 2007, 381-382 p.Conference paper (Other academic)
Alloying of disordered GaInP with nitrogen is shown to lead to very efficient PLU in GaInNP/GaAs heterostructures grown by gas source molecular beam epitaxy (GS‐MBE). This is attributed to the N‐induced changes in the band alignment at the GaInNP/GaAs heterointerface from the type I for the N‐free structure to the type II in the samples with N compositions exceeding 0.5%. Based on the performed excitation power dependent measurements, a possible mechanism for the energy upconversion is suggested as being due to the two‐step two‐photon absorption. The photon recycling effect is shown to be important for the structures with N=1%, from time‐resolved PL measurements. © 2007 American Institute of Physics
Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2007. 381-382 p.
, AIP Conference Proceedings, ISSN 0094-243X ; 893
IdentifiersURN: urn:nbn:se:liu:diva-39124DOI: 10.1063/1.2729925Local ID: 46765OAI: oai:DiVA.org:liu-39124DiVA: diva2:259973
PHYSICS OF SEMICONDUCTORS: 28th International Conference on the Physics of Semiconductors - ICPS 2006, Vienna, Austria, 24-28 July 2006