Optically detected cyclotron resonance studies of InGaNAs/GaAs structures
2007 (English)In: Physics of semiconductors : 28th International Conference on the Physics of Semiconductors, ICPS 2006, Vienna, Austria, 24-28 July 2006, American Institute of Physics (AIP), 2007, 383-384 p.Conference paper (Other academic)
We report on our recent results from a systematic study of layered structures containing an InGaNAs/GaAs quantum well (QW), by the optically detected cyclotron resonance (ODCR) technique. By monitoring photoluminescence (PL) emissions from various layers the predominant ODCR peak is shown to be related to carriers with a 2D character and an effective mass of 0.51 m∗e. The responsible carriers are ascribed to be electrons in GaAs/AlAs superlattices (SL) that are employed in the laser structures to prevent carrier leak by sandwiching the InGaNAs/GaAs QW. This conclusion is based on the following observations: (a) the ODCR peak is only observed in the structures containing the SL; (b) the effective mass value determined by the ODCR peak is independent of In and N compositions; (c) the same ODCR peak is also observed by monitoring PL from the SL. Unfortunately no ODCR signal related to InGaNAs was observed
Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2007. 383-384 p.
, AIP Conference Proceedings, ISSN 0094-243X ; 893
IdentifiersURN: urn:nbn:se:liu:diva-39125DOI: 10.1063/1.2729926Local ID: 46766ISBN: 978-0-7354-0397-0OAI: oai:DiVA.org:liu-39125DiVA: diva2:259974
28th Int. Conf. on the Physics of Semiconductors,2006, Vienna, Austria, 24-28 July 2006