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Identification of point defects in Ga(Al)NAs alloys
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.ORCID iD: 0000-0001-7155-7103
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2007 (English)In: AIP Conference Proceedings / Volume 893: PHYSICS OF SEMICONDUCTORS: 28th International Conference on the Physics of Semiconductors - ICPS 2006, American Institute of Physics (AIP), 2007, 227-228 p.Conference paper, Published paper (Other academic)
Abstract [en]

By employing the optically detected magnetic resonance (ODMR) technique, two differentGai defects, namely Gai-A and Gai-B, are found and identifiedin the investigated Ga(Al)NAs epilayers grown on GaAs substrates bymolecular-beam epitaxy (MBE). This finding shows that Ga interstitials arecommon intrinsic defects in various dilute nitrides. In addition tothe Gai-related defects, “middle line” ODMR signals were observed ataround g=2 and are suggested to arise from superposition ofa defect with a single ODMR line and a defectwith an unresolved HF structure. All defects studied are shownto act as non-radiative recombination centers, and are therefore harmfulto performance of potential light-emitting devices based on the alloys.©2007 American Institute of Physics

Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2007. 227-228 p.
Series
AIP Conference Proceedings, ISSN 0094-243X ; 893
National Category
Natural Sciences Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-39126DOI: 10.1063/1.2729851Local ID: 46767OAI: oai:DiVA.org:liu-39126DiVA: diva2:259975
Conference
28th International Conference on the Physics of Semiconductors - ICPS 2006, Vienna, Austria, 24-28 July 2006
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2017-03-27

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Vorona, IgorMchedlidze, T.Dagnelund, DanielBuyanova, IrinaChen, Weimin

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Vorona, IgorMchedlidze, T.Dagnelund, DanielBuyanova, IrinaChen, Weimin
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The Institute of TechnologyDepartment of Physics, Chemistry and BiologySemiconductor Materials
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