Intrinsic paramagnetic defects in GaNP alloys grown on silicon
2006 (English)In: 210th ECS Meeting Volume 3, Issue 5: State-of-the-Art Program on Compound Semiconductors 45 (SOTAPOCS 45) -and- Wide Bandgap Semiconductor Materials and Devices 7 / [ed] F. Ren, J. Bardwell, P. Chang, W. Johnson, P. Shen, E. Stokes, Electrochemical Society, 2006, Vol. 3, 231-236 p.Conference paper (Other academic)
Wepresent our recent results of grown-in defects in the GaNPalloy lattice matched to Si, by optically detected magnetic resonance.One of the defects was identified as the Gai-B complex,commonly formed in dilute nitrides. The remaining defects are suggestedto be probably related to intrinsic defects as well.
Place, publisher, year, edition, pages
Electrochemical Society, 2006. Vol. 3, 231-236 p.
, ECS Transactions, ISSN 1938-5862 ; vol. 3, Issue 5
Natural Sciences Condensed Matter Physics
IdentifiersURN: urn:nbn:se:liu:diva-39127DOI: 10.1149/1.2357212Local ID: 46768OAI: oai:DiVA.org:liu-39127DiVA: diva2:259976
210th ECS Meeting, October 29-November 3, 2006 , Cancun, Mexico