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Intrinsic paramagnetic defects in GaNP alloys grown on silicon
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.ORCID iD: 0000-0001-7155-7103
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.ORCID iD: 0000-0002-6405-9509
Department of Electrical and Electronic Engineering, Toyohashi University of Technology, Toyohashi, Aichi, Japan.
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2006 (English)In: 210th ECS Meeting Volume 3, Issue 5: State-of-the-Art Program on Compound Semiconductors 45 (SOTAPOCS 45) -and- Wide Bandgap Semiconductor Materials and Devices 7 / [ed] F. Ren, J. Bardwell, P. Chang, W. Johnson, P. Shen, E. Stokes, Electrochemical Society, 2006, Vol. 3, 231-236 p.Conference paper, Published paper (Other academic)
Abstract [en]

Wepresent our recent results of grown-in defects in the GaNPalloy lattice matched to Si, by optically detected magnetic resonance.One of the defects was identified as the Gai-B complex,commonly formed in dilute nitrides. The remaining defects are suggestedto be probably related to intrinsic defects as well.

Place, publisher, year, edition, pages
Electrochemical Society, 2006. Vol. 3, 231-236 p.
Series
ECS Transactions, ISSN 1938-5862 ; vol. 3, Issue 5
National Category
Natural Sciences Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-39127DOI: 10.1149/1.2357212Local ID: 46768OAI: oai:DiVA.org:liu-39127DiVA: diva2:259976
Conference
210th ECS Meeting, October 29-November 3, 2006 , Cancun, Mexico
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2017-03-27

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Vorona, IgorBuyanova, IrinaChen, Weimin

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