liu.seSearch for publications in DiVA
Change search
ReferencesLink to record
Permanent link

Direct link
Metamorphic InGaAs quantum wells for light emission at 1.3-1.6 μm
Show others and affiliations
2007 (English)In: Thin Solid Films, ISSN 0040-6090, Vol. 515, no 10, 4348-4351 p.Article in journal (Refereed) Published
Abstract [en]

Metamorphic InGaAs quantum well structures grown on GaAs reveal strong light emission at 1.3-1.6 μm, smooth surface with an average roughness below 2 nm and good rectifying I-V characteristics. Dark line defects are found in the QW. Post growth thermal annealing further improves the luminescence efficiency but does not remove those dark line defects. Some challenges of epitaxial growth using this method for laser applications are discussed. © 2006 Elsevier B.V. All rights reserved.

Place, publisher, year, edition, pages
2007. Vol. 515, no 10, 4348-4351 p.
National Category
Natural Sciences Condensed Matter Physics
URN: urn:nbn:se:liu:diva-39129DOI: 10.1016/j.tsf.2006.07.098Local ID: 46786OAI: diva2:259978
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2013-10-02

Open Access in DiVA

No full text

Other links

Publisher's full text

Search in DiVA

By author/editor
Buyanova, IrinaChen, Weimin
By organisation
The Institute of TechnologySemiconductor Materials
In the same journal
Thin Solid Films
Natural SciencesCondensed Matter Physics

Search outside of DiVA

GoogleGoogle Scholar
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

Altmetric score

Total: 73 hits
ReferencesLink to record
Permanent link

Direct link