Deep levels and carrier compensation in V-doped semi-insulating 4H-SiC
2007 (English)In: Applied Physics Letters, ISSN 0003-6951, Vol. 91, no 20Article in journal (Refereed) Published
Electron paramagnetic resonance was used to study semi-insulating (SI) 4H-SiC substrates doped with vanadium (V) in the range of 5.5× 1015 -1.1× 1017 cm-3. Our results show that the electrical activation of V is low and hence only in heavily V-doped 4H-SiC, vanadium is responsible for the SI behavior, whereas in moderately V-doped substrates, the SI properties are thermally unstable and determined by intrinsic defects. We show that the commonly observed thermal activation energy Ea ∼1.1 eV in V-doped 4H-SiC may be related to deep levels of the carbon vacancy. © 2007 American Institute of Physics.
Place, publisher, year, edition, pages
2007. Vol. 91, no 20
IdentifiersURN: urn:nbn:se:liu:diva-39535DOI: 10.1063/1.2814058Local ID: 49487OAI: oai:DiVA.org:liu-39535DiVA: diva2:260384