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Properties of dominant electron trap center in n-type SiC epilayers by means of deep level transient spectroscopy
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2007 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 101, no 7Article in journal (Refereed) Published
Abstract [en]

Characterization of dominant electron trap in as-grown SiC epilayers has been carried out using deep level transient spectroscopy. Two electron traps E1 and Z1 at Ec-0.21 and Ec-0.61 are observed, respectively, Z1 being the dominant level. Line shape fitting, capture cross section, and insensitivity with doping concentration have revealed interesting features of Z1 center. Spatial distribution discloses that the level is generated in the vicinity of epilayers/substrate interface and the rest of the overgrown layers is defect-free. Owing to the Si-rich growth conditions, the depth profile of Z1 relates it to carbon vacancy. The alpha particle irradiation transforms Z1 level into Z 1/Z2 center involving silicon and carbon vacancies. Isochronal annealing study further strengthens the proposed origin of the debated level. © 2007 American Institute of Physics.

Place, publisher, year, edition, pages
2007. Vol. 101, no 7
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Natural Sciences
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URN: urn:nbn:se:liu:diva-39592DOI: 10.1063/1.2715534Local ID: 50006OAI: oai:DiVA.org:liu-39592DiVA: diva2:260441
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2017-12-13

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Wahab, Qamar Ul

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