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Highly Uniform Hot-Wall MOCVD Growth of High-Quality AlGaN/GaN HEMT-Structures on 100 mm Semi-Insulating 4H-SiC Substrates
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
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2007 (English)In: ICNS-7,2007, 2007Conference paper, Published paper (Other academic)
Abstract [en]

   

Place, publisher, year, edition, pages
2007.
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Natural Sciences
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URN: urn:nbn:se:liu:diva-39806Local ID: 51333OAI: oai:DiVA.org:liu-39806DiVA: diva2:260655
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2011-12-29

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Lundskog, AndersForsberg, UrbanKakanakova-Georgieva, AneliaCiechonski, RafalIvanov, Ivan GueorguievDarakchieva, VanyaJanzén, Erik

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Lundskog, AndersForsberg, UrbanKakanakova-Georgieva, AneliaCiechonski, RafalIvanov, Ivan GueorguievDarakchieva, VanyaJanzén, Erik
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Semiconductor MaterialsThe Institute of Technology
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