Recombination dynamics and lasing in ZnO/ZnMgO single quantum well structures
2007 (English)In: Applied Physics Letters, ISSN 0003-6951, Vol. 91, no 20Article in journal (Refereed) Published
We report a time-resolved study of the recombination dynamics in molecular beam epitaxy grown ZnOZnMgO single quantum wells (SQWs) of 1.0-4.5 nm width. The SQWs exhibit different emission properties, depending on both the well width and defect density. Stimulated emission has been achieved at room temperature in a separate confinement double heterostructure having a 3 nm wide SQW as an active region. It has been found that a critical parameter for the lasing is the inhomogeneous broadening of both QW and barrier emission bands. © 2007 American Institute of Physics.
Place, publisher, year, edition, pages
2007. Vol. 91, no 20
IdentifiersURN: urn:nbn:se:liu:diva-39848DOI: 10.1063/1.2812549Local ID: 51522OAI: oai:DiVA.org:liu-39848DiVA: diva2:260697