liu.seSearch for publications in DiVA
Change search
ReferencesLink to record
Permanent link

Direct link
Recombination dynamics and lasing in ZnO/ZnMgO single quantum well structures
Show others and affiliations
2007 (English)In: Applied Physics Letters, ISSN 0003-6951, Vol. 91, no 20Article in journal (Refereed) Published
Abstract [en]

We report a time-resolved study of the recombination dynamics in molecular beam epitaxy grown ZnOZnMgO single quantum wells (SQWs) of 1.0-4.5 nm width. The SQWs exhibit different emission properties, depending on both the well width and defect density. Stimulated emission has been achieved at room temperature in a separate confinement double heterostructure having a 3 nm wide SQW as an active region. It has been found that a critical parameter for the lasing is the inhomogeneous broadening of both QW and barrier emission bands. © 2007 American Institute of Physics.

Place, publisher, year, edition, pages
2007. Vol. 91, no 20
National Category
Natural Sciences
URN: urn:nbn:se:liu:diva-39848DOI: 10.1063/1.2812549Local ID: 51522OAI: diva2:260697
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2015-09-22

Open Access in DiVA

No full text

Other links

Publisher's full text

Search in DiVA

By author/editor
Shubina, TatianaBergman, PederPozina, GaliaMonemar, Bo
By organisation
The Institute of TechnologyMaterials Science
In the same journal
Applied Physics Letters
Natural Sciences

Search outside of DiVA

GoogleGoogle Scholar
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

Altmetric score

Total: 28 hits
ReferencesLink to record
Permanent link

Direct link