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Recombination dynamics and lasing in ZnO/ZnMgO single quantum well structures
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2007 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 91, no 20Article in journal (Refereed) Published
Abstract [en]

We report a time-resolved study of the recombination dynamics in molecular beam epitaxy grown ZnOZnMgO single quantum wells (SQWs) of 1.0-4.5 nm width. The SQWs exhibit different emission properties, depending on both the well width and defect density. Stimulated emission has been achieved at room temperature in a separate confinement double heterostructure having a 3 nm wide SQW as an active region. It has been found that a critical parameter for the lasing is the inhomogeneous broadening of both QW and barrier emission bands. © 2007 American Institute of Physics.

Place, publisher, year, edition, pages
2007. Vol. 91, no 20
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Natural Sciences
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URN: urn:nbn:se:liu:diva-39848DOI: 10.1063/1.2812549Local ID: 51522OAI: oai:DiVA.org:liu-39848DiVA: diva2:260697
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2017-12-13

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Shubina, TatianaBergman, PederPozina, GaliaMonemar, Bo

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