The effect of the external lateral electric field on the luminescence intensity of InAs/GaAs quantum dots
2007 (English)In: Physics of the solid state, ISSN 1063-7834, E-ISSN 1090-6460, Vol. 49, no 10, 1995-1998 p.Article in journal (Refereed) Published
We report on low-temperature microphotoluminescence (μ-PL) measurements of InAs/GaAs quantum dots (QDs) exposed to a lateral external electric field. It is demonstrated that the QDs’ PL signal could be increased severalfold by altering the external and/or the internal electric field, which could be changed by an additional infrared laser. A model which accounts for a substantially faster lateral transport of the photoexcited carriers achieved in an external electric field is employed to explain the observed effects. The results obtained suggest that the lateral electric fields play a major role for the dot luminescence intensity measured in our experiment—a finding which could be used to tailor the properties of QD-based optoelectronic applications.
Place, publisher, year, edition, pages
2007. Vol. 49, no 10, 1995-1998 p.
IdentifiersURN: urn:nbn:se:liu:diva-39862DOI: 10.1134/S1063783407100307Local ID: 51544OAI: oai:DiVA.org:liu-39862DiVA: diva2:260711