Effects of External Fields on the Excitonic Emission from Single InAs/GaAs Quantum Dots
2008 (English)In: Microelectronics Journal, Vol. 39, Microelectronics Journal: Elsevier , 2008, 331-334 p.Conference paper (Refereed)
A low-temperature micro-photoluminescence (μ-PL) investigation of InAs/GaAs quantum dots (QDs) exposed to a lateral external electric field is reported. It is demonstrated that the QDs PL signal could be increased several times by altering the external and/or the internal electric field. The internal field in the vicinity of the dots could be altered by means of an additional infra-red laser. We propose a model, which is based on an essentially faster lateral transport of the charge carriers achieved in an external electric field. Consequently, also the capture probability into the dots and subsequently the dot luminescence is also enhanced. The results obtained suggest that the lateral electric fields play a major role for the dot luminescence intensity measured in our experiment.
Place, publisher, year, edition, pages
Microelectronics Journal: Elsevier , 2008. 331-334 p.
IdentifiersURN: urn:nbn:se:liu:diva-39927DOI: 10.1016/j.mejo.2007.07.007Local ID: 51702OAI: oai:DiVA.org:liu-39927DiVA: diva2:260776
The 6th International Conference on Low Dimensional Structures and Devices,2007