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Photoluminescence up-conversion in InAs/GaAs self-assembled quantum dots
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
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2000 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 77, no 6, 812-814 p.Article in journal (Refereed) Published
Abstract [en]

We report up-converted photoluminescence in a structure with InAs quantum dots embedded in GaAs. An efficient emission from the GaAs barrier is observed with resonant excitation of both the dots and the wetting layer. The intensity of the up-converted luminescence is found to increase superlinearly with the excitation density. The results suggest that the observed effect is due to a two-step two-photon absorption process involving quantum dot states. ⌐ 2000 American Institute of Physics.

Place, publisher, year, edition, pages
2000. Vol. 77, no 6, 812-814 p.
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Natural Sciences
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URN: urn:nbn:se:liu:diva-40116Local ID: 52355OAI: oai:DiVA.org:liu-40116DiVA: diva2:260965
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2017-12-13

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Paskov, PlamenHoltz, Per-OlofMonemar, Bo

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