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Electronic structure of beryllium acceptors confined in GaAs/AlxGa1-xAs quantum wells
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
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2001 (English)Article in journal (Refereed) Published
Abstract [en]

A detailed experimental investigation is presented of beryllium acceptors confined in GaAs/AlxGa1-xAs quantum well structures in the presence of an applied magnetic field. A number of features related to the transitions between the acceptor ground and excited states are reported: (1) the satellites corresponding to the 1S-2S acceptor transition involving the different components [j = 3/2(G8) and j = 5/2(G7,8)] of the acceptor bound exciton (BE), where the labels of the exciton states are according to j-j coupling theory (or the cubic crystal-field scheme), (2) the detailed splitting of the 1S3/2(G6)-2S3/2(G6) acceptor transition involving the lowest acceptor BE state j = 5/2(G7,8), and (3) a component of the 1S-2P acceptor transition. In addition to this, the magnetic field dependence of these transitions is investigated experimentally, and the results are compared with theoretical predictions based on existing theory.

Place, publisher, year, edition, pages
2001. Vol. 63, no 19, 1953171-1953175 p.
National Category
Natural Sciences
URN: urn:nbn:se:liu:diva-40119Local ID: 52359OAI: diva2:260968
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2011-01-13

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Holtz, Per-Olof
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The Institute of TechnologyMaterials Science
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