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Dynamic properties of radiative recombination in p-type d-doped layers in GaAs
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
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2001 (English)In: Vol. 63, p. 125337-Article in journal (Refereed) Published
Abstract [en]

   

Place, publisher, year, edition, pages
American Physical Society, 2001. Vol. 63, p. 125337-
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Natural Sciences
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URN: urn:nbn:se:liu:diva-40133Local ID: 52389OAI: oai:DiVA.org:liu-40133DiVA, id: diva2:260982
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2018-05-22

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Bergman, PederHoltz, Per-Olof

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