Internal structure of free excitons in GaN
2001 (English)In: Physica status solidi. B, Basic research, ISSN 0370-1972, Vol. 228, no 2, 467-470 p.Article in journal (Refereed) Published
Polarized photoluminescence is used to study the fine structure of free excitons in thick GaN layers grown on differently oriented sapphire substrates. The singlet-triplet splitting of the A exciton is measured and the exchange interaction constant in GaN is determined. For the samples grown on the a-plane sapphire, splitting of the A and B excitons induced by the uniaxial in-plane stress is also observed.
Place, publisher, year, edition, pages
2001. Vol. 228, no 2, 467-470 p.
IdentifiersURN: urn:nbn:se:liu:diva-40139DOI: 10.1002/1521-3951(200111)228:2<467::AID-PSSB467>3.0.CO;2-2Local ID: 52396OAI: oai:DiVA.org:liu-40139DiVA: diva2:260988