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Temperature influence on optical charging of self-assembled InAs/GaAs semiconductor quantum dots
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .ORCID iD: 0000-0002-4547-6673
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
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2001 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 78, no 19, 2952-2954 p.Article in journal (Refereed) Published
Abstract [en]

It is demonstrated that the photoluminescence spectra of single self-assembled InAs/GaAs quantum dots are very sensitive to excitation energy and crystal temperature. This is qualitatively explained in terms of the effective diffusivity of photogenerated particles, which affects the capture probability of the quantum dot. As a consequence, this opens the possibility of controlling the average number of excess electrons in the quantum dot by optical means. This technique may be used as a simple tool to create and study charged exciton complexes without any specially fabricated samples. ⌐ 2001 American Institute of Physics.

Place, publisher, year, edition, pages
2001. Vol. 78, no 19, 2952-2954 p.
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Natural Sciences
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URN: urn:nbn:se:liu:diva-40144DOI: 10.1063/1.1370547Local ID: 52414OAI: oai:DiVA.org:liu-40144DiVA: diva2:260993
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2017-12-13

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Karlsson, FredrikMoskalenko, EvgeniiHoltz, Per-OlofMonemar, Bo

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