The effect of an additional infrared laser on the carrier collection efficiency of InAs quantum dots
2004 (English)In: Applied Physics Letters, ISSN 0003-6951, Vol. 84, no 24, 4896-4898 p.Article in journal (Refereed) Published
The impact of single and multi-quantum dots (QD) on the exposure by a low-energy laser was investigated using micro-photoluminescence. The presence of the low-energy laser effectively quenched the single QD luminescence, at low temperatures. An induced screening of a built-in electric field that played an important role as a carrier capture mechanism led to this effect. When the capture efficieny was increased by elevated crystal temperature, the influence of the low-energy laser decreased.
Place, publisher, year, edition, pages
2004. Vol. 84, no 24, 4896-4898 p.
IdentifiersURN: urn:nbn:se:liu:diva-40619DOI: 10.1063/1.1763231Local ID: 53659OAI: oai:DiVA.org:liu-40619DiVA: diva2:261468