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The effect of an additional infrared laser on the carrier collection efficiency of InAs quantum dots
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .ORCID iD: 0000-0002-4547-6673
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
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2004 (English)In: Applied Physics Letters, ISSN 0003-6951, Vol. 84, no 24, 4896-4898 p.Article in journal (Refereed) Published
Abstract [en]

The impact of single and multi-quantum dots (QD) on the exposure by a low-energy laser was investigated using micro-photoluminescence. The presence of the low-energy laser effectively quenched the single QD luminescence, at low temperatures. An induced screening of a built-in electric field that played an important role as a carrier capture mechanism led to this effect. When the capture efficieny was increased by elevated crystal temperature, the influence of the low-energy laser decreased.

Place, publisher, year, edition, pages
2004. Vol. 84, no 24, 4896-4898 p.
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Natural Sciences
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URN: urn:nbn:se:liu:diva-40619DOI: 10.1063/1.1763231Local ID: 53659OAI: oai:DiVA.org:liu-40619DiVA: diva2:261468
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2015-01-23

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Moskalenko, EvgeniiKarlsson, FredrikHoltz, Per-Olof

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