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Acceptor-induced threshold energy for the optical charging of InAs single quantum dots
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .ORCID iD: 0000-0002-4547-6673
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
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2002 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, Vol. 66, no 19, 1953321-19533211 p.Article in journal (Refereed) Published
Abstract [en]

We study the photoluminescence of single InAs/GaAs self-assembled quantum dots for a range of excitation powers, excitation energies and sample temperatures 4 K30 K), this effect vanishes due to the essential decrease of the steady-state free electron concentration in the GaAs barrier as a result of thermally excited free holes appearing in the GaAs barrier valence band which provides an effective recombination channel for the free electrons. These experimental observations could be used as an effective tool to create and study charged excitons in quantum dots.

Place, publisher, year, edition, pages
2002. Vol. 66, no 19, 1953321-19533211 p.
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Natural Sciences
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URN: urn:nbn:se:liu:diva-40626DOI: 10.1103/PhysRevB.66.195332Local ID: 53676OAI: oai:DiVA.org:liu-40626DiVA: diva2:261475
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2015-01-23

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Moskalenko, EvgeniiKarlsson, FredrikHoltz, Per-OlofMonemar, Bo

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Moskalenko, EvgeniiKarlsson, FredrikHoltz, Per-OlofMonemar, Bo
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