Acceptor-induced threshold energy for the optical charging of InAs single quantum dots
2002 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, Vol. 66, no 19, 1953321-19533211 p.Article in journal (Refereed) Published
We study the photoluminescence of single InAs/GaAs self-assembled quantum dots for a range of excitation powers, excitation energies and sample temperatures 4 K30 K), this effect vanishes due to the essential decrease of the steady-state free electron concentration in the GaAs barrier as a result of thermally excited free holes appearing in the GaAs barrier valence band which provides an effective recombination channel for the free electrons. These experimental observations could be used as an effective tool to create and study charged excitons in quantum dots.
Place, publisher, year, edition, pages
2002. Vol. 66, no 19, 1953321-19533211 p.
IdentifiersURN: urn:nbn:se:liu:diva-40626DOI: 10.1103/PhysRevB.66.195332Local ID: 53676OAI: oai:DiVA.org:liu-40626DiVA: diva2:261475