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Anisotropy of the free exciton emission in GaN grown on a-plane sapphire
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
2002 (English)In: Physica status solidi. A, Applied research, ISSN 0031-8965, E-ISSN 1521-396X, Vol. 190, no 1, 75-79 p.Article in journal (Refereed) Published
Abstract [en]

The influence of the anisotropic in-plane strain on the optical response of GaN layers grown on a-plane sapphire is investigated. A splitting of the G5 states of the A and B free excitons into two components, polarized parallel and perpendicular to the strain direction, is observed. The experimental results are discussed in the framework of the effective exciton Hamiltonian formalism.

Place, publisher, year, edition, pages
2002. Vol. 190, no 1, 75-79 p.
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Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-40640DOI: 10.1002/1521-396X(200203)190:1<75::AID-PSSA75>3.0.CO;2-ZLocal ID: 53690OAI: oai:DiVA.org:liu-40640DiVA: diva2:261489
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2017-12-13

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Paskov, PlamenPaskova, TanjaHoltz, Per-OlofMonemar, Bo

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